Zhu Zijian, Zhao Yingxuan, Sheng Zhen, Gan Fuwan
National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2023 Jul 17;14(7):1435. doi: 10.3390/mi14071435.
In silicon modulator design, implantation is always a key factor, significantly influencing the doping profile and carrier distribution. As waveguide doping is limited by the compact footprint of the modulator rib, three-dimensional complex optimization is a viable option to improve performance. This work proposes an X-intersected modulator based on two inversely slanted junctions using the effective 3D Monte Carlo method for junction generation. The optimized results show that the modulation efficiency of the design is 1.09 V·cm, while the loss is 18 dB/cm, and the 3 dB bandwidth reaches over 35 GHz owing to the decreased resistance and capacitance of the 3D junction. This work demonstrates the benefits of 3D doping design in silicon modulators, contributing to higher efficiency and avoiding additional PN overlap to introduce lower capacitance. The design of 3D doping profiles well balances the DC and AC performance, and provides novel modulator solutions for high-speed datacom.
在硅调制器设计中，注入始终是一个关键因素，对掺杂分布和载流子分布有显著影响。由于调制器肋的紧凑尺寸限制了波导掺杂，三维复杂优化是提高性能的可行选择。这项工作提出了一种基于两个反向倾斜结的X交叉调制器，使用有效的三维蒙特卡罗方法生成结。优化结果表明，该设计的调制效率为1.09 V·cm，损耗为18 dB/cm，由于三维结的电阻和电容降低，3 dB带宽超过35 GHz。这项工作展示了三维掺杂设计在硅调制器中的优势，有助于提高效率，并避免额外的PN重叠以引入更低的电容。三维掺杂分布的设计很好地平衡了直流和交流性能，并为高速数据通信提供了新颖的调制器解决方案。
