Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058 Erlangen, Germany.
Phys Chem Chem Phys. 2013 Dec 7;15(45):19625-31. doi: 10.1039/c3cp53802h. Epub 2013 Oct 16.
The growth and oxidation of graphene supported on Rh(111) was studied in situ by high-resolution X-ray photoelectron spectroscopy. By variation of propene pressure and surface temperature the optimum growth conditions were identified, yielding graphene with low defect density. Oxidation of graphene was studied at temperatures between 600 and 1000 K, at an oxygen pressure of ~2 × 10(-6) mbar. The oxidation follows sigmoidal reaction kinetics. In the beginning, the reaction rate is limited by the number of defects, which represent the active sites for oxygen dissociation. After an induction period, the reaction rate increases and graphene is rapidly removed from the surface by oxidation. For graphene with a high defect density we found that the oxidation is faster. In general, a reduction of the induction period and a faster oxidation occur at higher temperatures.
在 Rh(111) 上负载的石墨烯的生长和氧化通过高分辨率 X 射线光电子能谱进行了原位研究。通过改变丙烯压力和表面温度，确定了最佳的生长条件，得到了缺陷密度较低的石墨烯。在氧气压力约为 2×10^(-6) mbar 的条件下，在 600 至 1000 K 的温度范围内研究了石墨烯的氧化。氧化遵循类正弦反应动力学。在开始时，反应速率受缺陷数量的限制，缺陷代表了氧离解的活性位点。诱导期后，反应速率增加，石墨烯通过氧化迅速从表面去除。对于缺陷密度较高的石墨烯，我们发现氧化速度更快。一般来说，在较高温度下，诱导期缩短，氧化速度加快。
