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利用自主研发的低压化学气相沉积(LPCVD)装置在铜箔上连续生长具有高度可重复性的单层石墨烯沉积。

Continuous Growth of Highly Reproducible Single-Layer Graphene Deposition on Cu Foil by Indigenously Developed LPCVD Setup.

作者信息

Kashyap Pradeep Kumar, Sharma Indu, Gupta Bipin Kumar

机构信息

Photonic Materials Metrology Sub Division, Advanced Materials and Devices Metrology Division and Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory Campus, Dr. K. S. Krishnan Road, New Delhi 110012, India.

出版信息

ACS Omega. 2019 Feb 8;4(2):2893-2901. doi: 10.1021/acsomega.8b03432. eCollection 2019 Feb 28.

DOI:10.1021/acsomega.8b03432
PMID:31459519
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6648755/
Abstract

Continuous growth of high-quality single-layer graphene (SLG) is highly desirable in several electronic and optoelectronic applications. To fulfill such requirements, we proposed a low-cost, highly reproducible high-quality SLG synthesized by indigenously developed low-pressure chemical vapor deposition (LPCVD) setup. The quality of SLG is examined by Raman spectroscopy, where we have probed the / ratio for continuous 30 runs to assess the reproducibility and quality of single-layer using proposed indigenous LPCVD setup for device fabrication. The highest / ratio of SLG (5.82) was found with full width at half maximum values of 2D peak and G peak of ∼30.10 cm and ∼20.86 cm, respectively. Further, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy have been performed to study the quality of SLG. Thickness measurement of graphene with graphene grain size is calculated from atomic force microscopy studies, and the average grain size is found to be 1-3 μm. Moreover, - characteristics have also been investigated by the two-probe method to ensure the quality of SLG. The lowest resistance of the SLG (∼387 Ω) was found at room temperature. Thus, this new indigenously developed low-cost setup provides a novel alternative method to produce highly reproducible metrology-grade continuous SLG on Cu substrate for next-generation quantum devices.

摘要

在多个电子和光电子应用中,高质量单层石墨烯(SLG)的连续生长是非常可取的。为满足此类需求,我们提出了一种通过自主研发的低压化学气相沉积(LPCVD)装置合成的低成本、高可重复性的高质量SLG。通过拉曼光谱对SLG的质量进行了检测,在检测过程中,我们使用所提出的用于器件制造的自主LPCVD装置,对连续30次运行的I2D/IG比率进行了探测,以评估单层的可重复性和质量。发现SLG的最高I2D/IG比率为5.82,2D峰和G峰的半高宽值分别约为30.10 cm和20.86 cm。此外,还进行了高分辨率透射电子显微镜和X射线光电子能谱分析,以研究SLG的质量。通过原子力显微镜研究计算出了具有石墨烯晶粒尺寸的石墨烯厚度,发现平均晶粒尺寸为1 - 3μm。此外,还通过两探针法研究了SLG的I - V特性,以确保SLG的质量。在室温下发现SLG的最低电阻约为387Ω。因此,这种新的自主研发的低成本装置为在铜衬底上生产用于下一代量子器件的高可重复性计量级连续SLG提供了一种新颖的替代方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/e98f718d2063/ao-2018-034323_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/cb94a39fb051/ao-2018-034323_0001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/880c84a2eb7e/ao-2018-034323_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/dea8d3abe34e/ao-2018-034323_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/e98f718d2063/ao-2018-034323_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/cb94a39fb051/ao-2018-034323_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/b8acdbdac03f/ao-2018-034323_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/ceb76e1d02ff/ao-2018-034323_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/c87d601fdc15/ao-2018-034323_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/e8735a460f04/ao-2018-034323_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/880c84a2eb7e/ao-2018-034323_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/dea8d3abe34e/ao-2018-034323_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6692/6648755/e98f718d2063/ao-2018-034323_0007.jpg

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