Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, 474 011, India,
J Mol Model. 2013 Dec;19(12):5343-54. doi: 10.1007/s00894-013-2021-7. Epub 2013 Oct 26.
The structural, elastic and electronic properties of lutatium-pnictides (LuN, LuP, LuAs, LuSb, and LuBi) were analyzed by using full-potential linearized augmented plane wave within generalized gradient approximation in the stable rock-salt structure (B1 phase) with space group Fm-3m and high-pressure CsCl structure (B2 phase) with space group Pm-3m. Hubbard-U and spin-orbit coupling were included to predict correctly the semiconducting band gap of LuN. Under compression, these materials undergo first-order structural transitions from B1 to B2 phases at 241, 98, 56.82, 25.2 and 32.3 GPa, respectively. The computed elastic properties show that LuBi is ductile by nature. The electronic structure calculations show that LuN is semiconductor at ambient conditions with an indirect band gap of 1.55 eV while other Lu-pnictides are metallic. It was observed that LuN shows metallization at high pressures. The structural properties, viz, equilibrium lattice constant, bulk modulus and its pressure derivative, transition pressure, equation of state, volume collapse, band gap and elastic moduli, show good agreement with available data.
采用基于广义梯度近似的全势能线性缀加平面波方法,在稳定的岩盐结构(B1 相)和 CsCl 结构(B2 相)中对镥-磷化物(LuN、LuP、LuAs、LuSb 和 LuBi)的结构、弹性和电子性质进行了分析,空间群分别为 Fm-3m 和 Pm-3m。考虑了 Hubbard-U 和自旋轨道耦合,以正确预测 LuN 的半导体带隙。在压缩下,这些材料在 241、98、56.82、25.2 和 32.3 GPa 处分别经历从 B1 到 B2 相的一级结构相变。计算得到的弹性性质表明,LuBi 本质上是延展性的。电子结构计算表明,LuN 在环境条件下是半导体,具有 1.55 eV 的间接带隙,而其他 Lu 磷化物是金属的。观察到 LuN 在高压下表现出金属化。结构性质,即平衡晶格常数、体弹性模量及其压力导数、相变压力、状态方程、体积压缩、带隙和弹性模量,与可用数据吻合良好。