在周期性硅（001）亚微米柱上可控形成锗硅纳米结构。

Controlled formation of GeSi nanostructures on periodic Si (001) sub-micro pillars.

作者信息

Zhou Tong, Zeng Cheng, Ma Qianqian, Ma Yingjie, Fan Yongliang, Jiang Zuimin, Xia Jinsong, Zhong Zhenyang

机构信息

State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, China.

出版信息

Nanoscale. 2014 Apr 21;6(8):3925-9. doi: 10.1039/c3nr04146h.

DOI:10.1039/c3nr04146h

PMID:24172708

Abstract

Self-assembled GeSi nanostructures on periodic Si (001) sub-micro pillars (SMPs) are systematically studied. Different GeSi nanostructures, including circularly arranged quantum dots, quantum rings and quantum dot molecules can be readily obtained at the edge of the pillars by controlling the growth temperatures and the diameter of the pillar. These phenomena are explained by taking into account the surface chemical potential around the top terrace of SMPs, which is considerably affected by the formation of {113} facets. Our results demonstrate a feasible route to obtain novel periodic Si pillars embedded with the desired GeSi nanostructures, which have promising applications in optoelectronic devices.

摘要

对周期性硅（001）亚微米柱（SMPs）上自组装的锗硅纳米结构进行了系统研究。通过控制生长温度和柱体直径，可在柱体边缘轻松获得不同的锗硅纳米结构，包括圆形排列的量子点、量子环和量子点分子。考虑到SMPs顶部平台周围的表面化学势，这些现象得到了解释，而{113}面的形成对其有很大影响。我们的结果展示了一条可行的途径，可获得嵌入所需锗硅纳米结构的新型周期性硅柱，这些硅柱在光电器件中具有广阔的应用前景。