Butkovičová D, Marti X, Saidl V, Schmoranzerová-Rozkotová E, Wadley P, Holý V, Nĕmec P
Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic.
Rev Sci Instrum. 2013 Oct;84(10):103902. doi: 10.1063/1.4823520.
We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in situ by means of X-ray diffraction, are strongly dependent on both the wafer thickness and on the selection of the glue which is used to bond the wafer to the piezoelectric actuator. We have identified an optimal set of parameters that reproducibly transfers the largest distortions at room temperature. We have studied strains produced not only by the frequently used uniaxial piezostressors but also by the biaxial ones which replicate the routinely performed experiments using substrate-induced strains but with the advantage of a continuously tunable lattice distortion. The time evolution of the strain response and the sample tilting and/or bending are also analyzed and discussed.
我们报告了在各种实验条件下，从机电压电堆传递到砷化镓晶片上的应力的系统研究。我们表明，通过X射线衍射原位监测的半导体晶格中的应变，强烈依赖于晶片厚度以及用于将晶片粘结到压电致动器的胶水的选择。我们已经确定了一组最佳参数，该参数在室温下可重复地传递最大的变形。我们不仅研究了常用的单轴压应力器产生的应变，还研究了双轴压应力器产生的应变，双轴压应力器复制了使用衬底诱导应变的常规实验，但具有连续可调晶格畸变的优点。还分析和讨论了应变响应的时间演化以及样品的倾斜和/或弯曲。
