氧化锌薄膜电阻式存储的稳定机制：可控制氧分压对缺陷的影响。

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.

机构信息

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

出版信息

Nanoscale Res Lett. 2013 Nov 16;8(1):483. doi: 10.1186/1556-276X-8-483.

DOI:10.1186/1556-276X-8-483

PMID:24237683

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3879181/

Abstract

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

摘要

我们提出了一种基于不同氧分压射频溅射法制备的 ZnO 薄膜的阻变器件稳定化方案。I-V 测试和统计结果表明，ZnO 电阻式随机存取存储器（ReRAM）器件的工作稳定性高度依赖于氧条件。数据表明，在 10% O2 分压下制备的 ZnO 薄膜 ReRAM 器件具有最佳性能。通过透射电子显微镜（TEM）和不同氧分压下的 X 射线衍射（XRD）研究了 ZnO 的结构对稳定开关行为的影响。此外，还测量了 PL 和 XPS 结果，以研究氧空位在 ZnO 中引发的不同电荷状态，这会影响开关行为的稳定性。