具有应变调制结构的 InGaN/GaN 量子点多能级中带太阳能电池。

A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure.

机构信息

International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan; JST-PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo, 102-0076, Japan.

出版信息

Adv Mater. 2014 Mar 5;26(9):1414-20. doi: 10.1002/adma.201304335. Epub 2013 Dec 6.

DOI:10.1002/adma.201304335

PMID:24310932

Abstract

Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.

摘要

多层堆叠的 InGaN/GaN 量子点被嵌入到 InGaN p-n 结中，以开发多级中间能带（MIB）太阳能电池。实验和理论计算都证明了 IB 跃迁的存在。MIB 太阳能电池在从紫外到近红外的区域显示出宽的光伏响应。这项工作为光伏领域的高效 IB 太阳能电池开辟了一个有趣的机会。