WPI-Advanced Institute for Materials Research (AIMR), Tohoku University , Sendai 980-8577, Japan.
ACS Nano. 2014 Jan 28;8(1):752-60. doi: 10.1021/nn4054039. Epub 2014 Jan 6.
Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm(2) V(-1) s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
基于层状材料（如石墨烯）的光电器件因其独特的性质和潜在的技术应用而引起了极大的关注。本文描述了纳米 GaTe 薄片作为层状材料的电和光电性质。由多层 GaTe 制成的晶体管表现出 p 型行为，空穴迁移率约为 0.2 cm(2) V(-1) s(-1)。栅晶体管表现出高达 10(4) A/W 的高光敏度，这大大优于石墨烯、MoS2 和其他层状化合物。同时，响应速度也非常快，仅为 6 ms。本研究中描述的高光敏度和快速响应时间强烈表明，多层 GaTe 是未来光电器件和光敏器件应用的有前途的候选材料。
