Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, University of Rouen and INSA Rouen , 76801 St. Etienne du Rouvray, France.
Nano Lett. 2014 Jan 8;14(1):107-14. doi: 10.1021/nl4034768. Epub 2013 Dec 18.
A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells has been analyzed by microphotoluminescence spectroscopy (μPL), high-resolution scanning transmission electron microscopy (HR-STEM) and atom probe tomography (APT). The correlated measurements constitute a rich and coherent set of data supporting the interpretation that the observed μPL narrow emission lines, polarized perpendicularly to the crystal c-axis and with energies in the interval 2.9-3.3 eV, are related to exciton states localized in potential minima induced by the irregular 3D In distribution within the quantum well (QW) planes. This novel method opens up interesting perspectives, as it will be possible to apply it on a wide class of quantum confining emitters and nano-objects.
通过微光致发光光谱（μPL）、高分辨率扫描透射电子显微镜（HR-STEM）和原子探针断层扫描（APT）对包含一组 InGaN/GaN 非极性多量子阱的单个纳米级物体进行了分析。相关测量构成了一组丰富而连贯的数据，支持了这样一种解释，即观察到的 μPL 窄发射线垂直于晶体 c 轴偏振，能量在 2.9-3.3 eV 之间，与量子阱（QW）平面内不规则 3D In 分布引起的局域激子态有关。这种新方法开辟了有趣的前景，因为它将有可能应用于广泛的量子限制发射体和纳米物体。
