在垂直 GaN 纳米棒阵列的非极性晶面上生长的 InGaN/GaN 多量子阱。

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.

机构信息

Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089, United States.

出版信息

Nano Lett. 2012 Jun 13;12(6):3257-62. doi: 10.1021/nl301307a. Epub 2012 May 24.

Abstract

Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can be eliminated when they are grown on nonpolar planes. The capability of growing ordered GaN nanorod arrays with different rod densities is demonstrated. Light emission from InGaN/GaN MQWs grown on the nonpolar facets is investigated by photoluminescence. Local emission from MQWs grown on different regions of GaN nanorods is studied by cathodoluminescence (CL). The core-shell structure of MQWs grown on GaN nanorods is investigated by cross-sectional transmission electron microscopy in both axial and radial directions. The results show that the active MQWs are predominantly grown on nonpolar planes of GaN nanorods, consistent with the observations from CL. The results suggest that GaN nanorod arrays are suitable growth templates for efficient light-emitting diodes.

摘要

通过在（<0001>）衬底上进行选择区域生长，垂直生长出均匀的 GaN 纳米棒阵列。GaN 纳米棒呈现出六个非极性{1-100}面，作为基于 InGaN 的发光二极管量子阱有源区的生长表面。与在极性{0001}平面上生长相比，当在非极性平面上生长时，可以消除多量子阱（MQW）中的压电场。展示了生长具有不同棒密度的有序 GaN 纳米棒阵列的能力。通过光致发光研究了在非极性面上生长的 InGaN/GaN MQW 的发光。通过阴极发光（CL）研究了在 GaN 纳米棒不同区域生长的 MQW 的局部发射。通过轴向和径向的横截面透射电子显微镜研究了在 GaN 纳米棒上生长的 MQW 的核壳结构。结果表明，活性 MQW 主要在 GaN 纳米棒的非极性面上生长，这与 CL 的观察结果一致。结果表明，GaN 纳米棒阵列是高效发光二极管的合适生长模板。