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超薄膜镍/PMN-PT 界面上应变和电荷协同磁电耦合的定量研究。

Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface.

机构信息

1] Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA [2].

Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH, USA.

出版信息

Sci Rep. 2014 Jan 14;4:3688. doi: 10.1038/srep03688.

Abstract

Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

摘要

应变和电荷共同介导的磁电耦合有望在超薄膜铁磁/铁电多铁异质结构中出现,这可能导致磁电耦合显著增强。然而,观察到应变和表面电荷共同介导的磁电耦合具有挑战性,并且难以定量区分这两种磁电耦合机制。在这项工作中,我们通过使用仅具有应变介导的磁电耦合的 Ni0.79Fe0.21/Cu/PMN-PT 异质结构作为对照,证明了在超薄膜 Ni0.79Fe0.21/PMN-PT 界面上应变和表面电荷共同介导的磁电耦合的定量共存。NiFe/PMN-PT 异质结构在 PMN-PT 界面的表面电荷作用下表现出 375 Oe 的高电压诱导有效磁场变化增强,有效磁场变化增强了 375 Oe。没有通过在 PMN-PT 界面插入 Cu 层增强电荷介导的磁电效应,电场对有效磁场的修正为 202 Oe。通过区分磁电耦合机制,磁的纯表面电荷修饰与 PMN-PT 的极化强烈相关。在零电场下观察到 104 Oe 的非易失性有效磁场变化,这源于 PMN-PT 的不同剩余极化状态。超薄膜磁性/铁电异质结构中的应变和电荷共同介导的磁电耦合可能导致具有增强磁电耦合的高效、非易失性磁电器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6c/3891213/fa2c70309ec7/srep03688-f1.jpg

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