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高性能银纳米线掺杂石墨烯/氧化铟锡混合透明导电电极

High-Performance Ag-NWs Doped Graphene/ITO Hybrid Transparent Conductive Electrode.

作者信息

Bourahla Hana, Fernández Susana, Ryu Yu Kyoung, Velasco Andres, Malkia Chahinez, Boscá Alberto, Gómez-Mancebo M Belén, Calle Fernando, Martinez Javier

机构信息

Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM-UPM), E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Av. Complutense 30, 28040 Madrid, Spain.

Departamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Av. Complutense 30, 28040 Madrid, Spain.

出版信息

Micromachines (Basel). 2025 Feb 11;16(2):204. doi: 10.3390/mi16020204.

Abstract

Indium tin oxide (ITO) is a commonly used material for transparent conductive electrodes (TCE) in optoelectronic applications. On the other hand, graphene has superior electrical conductivity and exceptional mechanical flexibility, which makes it a promising candidate as a TCE material. This work proposes a CVD graphene/ITO hybrid electrode enhanced by doping with silver nanowires (Ag-NWs). The study aims to improve the performance of the electrode by optimizing two key parameters during the fabrication process: the thermal annealing time after the transfer of graphene on ITO and the Ag-NWs doping conditions. The annealing treatment is fundamental to reducing the residues on the surface of graphene and increasing the interface contact between graphene and ITO. The correct coverage and distribution of the dopant on graphene is obtained by controlling the concentration of the Ag-NWs and the spin coating speeds. The results indicate a substantial improvement in the optical and electrical performance of the Ag-NWs/graphene/ITO hybrid electrode. A remarkably low sheet resistance of 42.4 Ω/sq (±2 Ω/sq) has been achieved while maintaining a high optical transmittance of 87.3% (±0.5%).

摘要

氧化铟锡(ITO)是光电子应用中常用的透明导电电极(TCE)材料。另一方面,石墨烯具有优异的导电性和出色的机械柔韧性,这使其成为一种很有前景的TCE材料候选者。这项工作提出了一种通过掺杂银纳米线(Ag-NWs)增强的化学气相沉积(CVD)石墨烯/ITO混合电极。该研究旨在通过在制造过程中优化两个关键参数来提高电极性能:石墨烯转移到ITO上后的热退火时间以及Ag-NWs掺杂条件。退火处理对于减少石墨烯表面的残留物和增加石墨烯与ITO之间的界面接触至关重要。通过控制Ag-NWs的浓度和旋涂速度,可以在石墨烯上获得掺杂剂的正确覆盖和分布。结果表明,Ag-NWs/石墨烯/ITO混合电极的光学和电学性能有了显著改善。在保持87.3%(±0.5%)的高光学透过率的同时,实现了42.4Ω/sq(±2Ω/sq)的极低方块电阻。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/00ce/11857558/6d2cfd7e315a/micromachines-16-00204-g001.jpg

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