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氧气体在石墨烯中引入的亚纳米空位缺陷。

Subnanometer vacancy defects introduced on graphene by oxygen gas.

机构信息

Department of Applied Chemistry and Biotechnology, Chiba University , 1-33 Yayoi, Inage, Chiba 263-8522, Japan.

出版信息

J Am Chem Soc. 2014 Feb 12;136(6):2232-5. doi: 10.1021/ja4117268. Epub 2014 Jan 30.

DOI:10.1021/ja4117268
PMID:24460150
Abstract

The basal plane of graphene has been known to be less reactive than the edges, but some studies observed vacancies in the basal plane after reaction with oxygen gas. Observation of these vacancies has typically been limited to nanometer-scale resolution using microscopic techniques. This work demonstrates the introduction and observation of subnanometer vacancies in the basal plane of graphene by heat treatment in a flow of oxygen gas at low temperature such as 533 K or lower. High-resolution transmission electron microscopy was used to directly observe vacancy structures, which were compared with image simulations. These proposed structures contain C═O, pyran-like ether, and lactone-like groups.

摘要

石墨烯的基面比边缘的反应性低,但有些研究观察到在与氧气反应后基面上有空位。使用显微镜技术,通常只能在纳米级分辨率下观察到这些空位。这项工作通过在 533K 或更低的低温氧气气流中进行热处理,证明了在石墨烯基面中引入和观察到亚纳米级空位。高分辨率透射电子显微镜用于直接观察空位结构,并与图像模拟进行了比较。这些提出的结构包含 C═O、吡喃醚和内酯基团。

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