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电压激活 Kv1.2 通道门控电流的粗粒化模拟。

Coarse-grained simulations of the gating current in the voltage-activated Kv1.2 channel.

机构信息

Department of Chemistry, University of Southern California, Los Angeles, CA 90089.

出版信息

Proc Natl Acad Sci U S A. 2014 Feb 11;111(6):2128-33. doi: 10.1073/pnas.1324014111. Epub 2014 Jan 24.

Abstract

Quantitative structure-based modeling of voltage activation of ion channels is very challenging. For example, it is very hard to reach converging results, by microscopic simulations while macroscopic treatments involve major uncertainties regarding key features. The current work overcomes some of the above challenges by using our recently developed coarse-grained (CG) model in simulating the activation of the Kv1.2 channel. The CG model has allowed us to explore problems that cannot be fully addressed at present by microscopic simulations, while providing insights on some features that are not usually considered in continuum models, including the distribution of the electrolytes between the membrane and the electrodes during the activation process and thus the physical nature of the gating current. Here, we demonstrate that the CG model yields realistic gating charges and free energy landscapes that allow us to simulate the fluctuating gating current in the activation processes. Our ability to simulate the time dependence of the fast gating current allows us to reproduce the observed trend and provides a clear description of its relationship to the landscape involved in the activation process.

摘要

基于结构的离子通道电压激活的定量建模极具挑战性。例如,通过微观模拟很难得到收敛的结果,而宏观处理则涉及到关键特征的重大不确定性。当前的工作通过使用我们最近开发的粗粒化 (CG) 模型来模拟 Kv1.2 通道的激活,克服了上述部分挑战。CG 模型使我们能够探索目前微观模拟无法完全解决的问题,同时提供了一些在连续体模型中通常不考虑的特征的见解,包括在激活过程中电解质在膜和电极之间的分布,以及因此门控电流的物理性质。在这里,我们证明 CG 模型产生了现实的门控电荷和自由能景观,使我们能够模拟激活过程中波动的门控电流。我们模拟快速门控电流随时间变化的能力允许我们重现观察到的趋势,并提供了其与激活过程中涉及的景观关系的清晰描述。

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Mechanism of voltage gating in potassium channels.钾通道电压门控机制。
Science. 2012 Apr 13;336(6078):229-33. doi: 10.1126/science.1216533.
8
Realistic simulation of the activation of voltage-gated ion channels.电压门控离子通道激活的拟真模拟。
Proc Natl Acad Sci U S A. 2012 Feb 28;109(9):3335-40. doi: 10.1073/pnas.1121094109. Epub 2012 Feb 13.
10
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