GaInNAsSb 多结太阳能电池的性能评估。

Performance assessment of multijunction solar cells incorporating GaInNAsSb.

机构信息

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere 33101, Finland.

出版信息

Nanoscale Res Lett. 2014 Feb 5;9(1):61. doi: 10.1186/1556-276X-9-61.

DOI:10.1186/1556-276X-9-61

PMID:24498981

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3923094/

Abstract

We have measured the characteristics of molecular beam epitaxy grown GaInNAsSb solar cells with different bandgaps using AM1.5G real sun illumination. Based on the solar cell diode characteristics and known parameters for state-of-the-art GaInP/GaAs and GaInP/GaAs/Ge cells, we have calculated the realistic potential efficiency increase for GaInP/GaAs/GaInNAsSb and GaInP/GaAs/GaInNAsSb/Ge multijunction solar cells for different current matching conditions. The analyses reveal that realistic GaInNAsSb solar cell parameters, render possible an extraction efficiency of over 36% at 1-sun AM1.5D illumination. PACS: 88.40.hj; 88.40.jm; 88.40.jp; 81.15.Hi.

摘要

我们使用 AM1.5G 实际太阳光照射测量了具有不同带隙的分子束外延生长 GaInNAsSb 太阳能电池的特性。基于太阳能电池二极管特性和最先进的 GaInP/GaAs 和 GaInP/GaAs/Ge 电池的已知参数，我们计算了不同电流匹配条件下 GaInP/GaAs/GaInNAsSb 和 GaInP/GaAs/GaInNAsSb/Ge 多结太阳能电池的实际潜在效率提高。分析表明，实际的 GaInNAsSb 太阳能电池参数可在 1 太阳 AM1.5D 光照下实现超过 36%的提取效率。