通过全固态分子束外延生长的高效砷化镓和磷化镓铟太阳能电池。

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.

作者信息

Lu Shulong, Ji Lian, He Wei, Dai Pan, Yang Hui, Arimochi Masayuki, Yoshida Hiroshi, Uchida Shiro, Ikeda Masao

机构信息

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398, Suzhou, China.

出版信息

Nanoscale Res Lett. 2011 Oct 31;6(1):576. doi: 10.1186/1556-276X-6-576.

DOI:10.1186/1556-276X-6-576

PMID:22040124

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3223256/

Abstract

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.

摘要

我们报告了通过全固态分子束外延（MBE）技术生长的砷化镓（GaAs）和磷化镓铟（GaInP）太阳能电池的初步结果。对于GaAs单结太阳能电池，通过应用AlInP作为窗口层和GaInP作为背表面场层，在1倍太阳聚光和空气质量1.5全球（AM1.5G）条件下实现了26%的光电转换效率。GaInP太阳能电池的效率也达到了16.4%。我们的结果表明，通过MBE生长的含磷化物的III-V族化合物半导体太阳能电池可与金属有机化学气相沉积生长的高效太阳能电池相媲美。