Tsay Chien-Yie, Chen Shih-Ting, Tsai Hsuan-Meng
Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan.
Materials (Basel). 2023 Sep 25;16(19):6389. doi: 10.3390/ma16196389.
The Ga-doped MgZnO (GMZO) transparent semiconductor thin films were prepared using the sol-gel and spin-coating deposition technique. Changes in the microstructural features, optical parameters, and electrical characteristics of sol-gel-synthesized MgZnO (MZO) thin films affected by the amount of Ga dopants (0-5 at%) were studied. The results of grazing incidence X-ray diffraction (GIXRD) examination showed that all as-prepared MZO-based thin films had a wurtzite-type structure and hexagonal phase, and the incorporation of Ga ions into the MZO nanocrystals refined the microstructure and reduced the average crystallite size and flatness of surface roughness. Each glass/oxide thin film sample exhibited a higher average transmittance than 91.5% and a lower average reflectance than 9.1% in the visible range spectrum. Experimental results revealed that the optical bandgap energy of the GMZO thin films was slightly higher than that of the MZO thin film; the Urbach energy became wider with increasing Ga doping level. It was found that the 2 at% and 3 at% Ga-doped MZO thin films had better electrical properties than the undoped and 5 at% Ga-doped MZO thin films.
采用溶胶-凝胶和旋涂沉积技术制备了掺镓MgZnO（GMZO）透明半导体薄膜。研究了镓掺杂量（0-5原子%）对溶胶-凝胶合成的MgZnO（MZO）薄膜微观结构特征、光学参数和电学特性的影响。掠入射X射线衍射（GIXRD）检测结果表明，所有制备的MZO基薄膜均具有纤锌矿型结构和六方相，Ga离子掺入MZO纳米晶体中细化了微观结构，减小了平均晶粒尺寸和表面粗糙度的平整度。在可见光谱范围内，每个玻璃/氧化物薄膜样品的平均透过率均高于91.5%，平均反射率均低于9.1%。实验结果表明，GMZO薄膜的光学带隙能量略高于MZO薄膜；随着Ga掺杂水平的增加，乌尔巴赫能量变宽。发现2原子%和3原子%Ga掺杂的MZO薄膜比未掺杂和5原子%Ga掺杂的MZO薄膜具有更好的电学性能。
