基于纸质衬底的低电压质子/电子混合氧化锌突触晶体管。

Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates.

机构信息

Nanjing University, School of Electronic Science and Engineering, Nanjing 210093, Jiangsu, People's Republic of China. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.

出版信息

Nanotechnology. 2014 Mar 7;25(9):094001. doi: 10.1088/0957-4484/25/9/094001. Epub 2014 Feb 12.

DOI:10.1088/0957-4484/25/9/094001

PMID:24521781

Abstract

Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics.

摘要

基于低压（1.5 V）的铟锌氧化物（IZO）的电双层（EDL）薄膜晶体管（TFT），采用纳米颗粒质子导电 SiO2 电解质薄膜作为栅极，被制备在纸张衬底上。通过调整 IZO 沟道层的厚度，可以获得增强型和耗尽型两种工作模式。此外，这种柔性的 IZO 质子/电子混合 EDL TFT 可以用作人工突触，并展示了突触刺激响应和短期突触可塑性功能。本文提出的基于纸张衬底的质子/电子混合 EDL TFT 有望应用于低功耗柔性纸张电子、人工突触和生物电子领域。