Institute of Chemistry, ‡Racah Institute of Physics, and §Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem , Jerusalem 91904, Israel.
Nano Lett. 2014 Mar 12;14(3):1349-53. doi: 10.1021/nl4043642. Epub 2014 Feb 27.
A new approach for doping of Cu2S nanocrystal arrays using thermal treatment at moderate temperatures (T < 400 K) is presented. This thermal doping process yields conductance enhancement by 6 orders of magnitude. Local probe measurements prove this doping is an intraparticle effect and, moreover, tunneling spectroscopy data signify p-type doping. The doping mechanism is attributed to Cu vacancy formation, resulting in free holes. Thermal-doping temperature dependence exhibits an Arrhenius-like behavior, providing the vacancy formation energy of 1.6 eV. The moderate temperature conditions for thermal doping unique to these nanocrystals allow patterned doping of nanocrystal films through local heating by a focused laser beam, toward fabrication of nanocrystal-based electronic devices.
本文提出了一种在中等温度（T < 400 K）下通过热处理掺杂 Cu2S 纳米晶阵列的新方法。这种热掺杂过程使电导增强了 6 个数量级。局部探针测量证明这种掺杂是一种粒子内效应，而且，隧道谱数据表明是 p 型掺杂。掺杂机制归因于 Cu 空位的形成，从而产生自由空穴。热掺杂温度依赖性表现出类似于 Arrhenius 的行为，提供了 1.6 eV 的空位形成能。这些纳米晶体特有的中等温度热掺杂条件允许通过聚焦激光束对纳米晶薄膜进行局部加热，从而制造基于纳米晶体的电子器件。
