Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA.
Nanotechnology. 2014 Mar 28;25(12):125501. doi: 10.1088/0957-4484/25/12/125501. Epub 2014 Feb 25.
A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.
已展示了一种反向偏压可调的 Pd 和 Pt 功能化石墨烯/Si 异质结构肖特基二极管 H2 传感器。与石墨烯化学电阻传感器相比，化学二极管传感器的灵敏度高出一个数量级以上，因为分子吸附引起的肖特基势垒高度变化导致反向偏压下异质结电流呈指数变化。反向偏压操作还实现了低功耗，以及原子薄石墨烯费米能级的调制，从而实现了 H₂ 的可调灵敏度和检测，可低至亚 ppm 范围。
