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近场热晶体管。

Near-field thermal transistor.

机构信息

Laboratoire Charles Fabry, UMR 8501, Institut d'Optique, CNRS, Université Paris-Sud 11, 2, Avenue Augustin Fresnel, 91127 Palaiseau Cedex, France.

Institut für Physik, Carl von Ossietzky Universität, D-26111 Oldenburg, Germany.

出版信息

Phys Rev Lett. 2014 Jan 31;112(4):044301. doi: 10.1103/PhysRevLett.112.044301.

Abstract

Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect transistor that is able to control the flow of heat exchanged by evanescent thermal photons between two bodies. By changing the gate temperature around its critical value, the heat flux exchanged between the hot body (source) and the cold body (drain) can be reversibly switched, amplified, and modulated by a tiny action on the gate. Such a device could find important applications in the domain of nanoscale thermal management and it opens up new perspectives concerning the development of contactless thermal circuits intended for information processing using the photon current rather than the electric current.

摘要

利用三个分离的固体元件块、一个热源和一个热阱以及一个由绝缘-金属转变材料制成的栅极,我们引入了一种纳米级的场效应晶体管模拟装置,它能够控制两个物体之间通过消逝场热光子交换的热量流。通过改变栅极温度接近其临界值,热体(源)和冷体(阱)之间的热流可以通过在栅极上进行微小的操作来实现可逆切换、放大和调制。这种装置在纳米尺度热管理领域有着重要的应用前景,并为使用光子流而不是电流来进行信息处理的非接触式热电路的发展开辟了新的前景。

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