Ghanekar Alok, Tian Yanpei, Ricci Matthew, Zhang Sinong, Gregory Otto, Zheng Yi
Opt Express. 2018 Jan 22;26(2):A209-A218. doi: 10.1364/OE.26.00A209.
We theoretically analyze two near-field thermal rectification devices: a radiative thermal diode and a thermal transistor that utilize a phase change material to achieve dynamic control over heat flow by exploiting metal-insulator transition of VO near 341 K. The thermal analogue of electronic diode allows high heat flow in one direction while it restricts the heat flow when the polarity of temperature gradient is reversed. We show that with the introduction of 1-D rectangular grating, thermal rectification is dramatically enhanced in the near-field due to reduced tunneling of surface waves across the interfaces for negative polarity. The radiative thermal transistor also works around phase transition temperature of VO and controls heat flow. We demonstrate a transistor-like behavior wherein heat flow across the source and the drain can be greatly varied by making a small change in gate temperature.
一种辐射热二极管和一种热晶体管，它们利用相变材料，通过利用VO在341K附近的金属-绝缘体转变来实现对热流的动态控制。电子二极管的热模拟物允许热流在一个方向上高效流动，而当温度梯度的极性反转时，它会限制热流。我们表明，通过引入一维矩形光栅，由于表面波在负极性时穿过界面的隧穿减少，近场中的热整流显著增强。辐射热晶体管也在VO的相变温度附近工作并控制热流。我们展示了一种类似晶体管的行为，其中通过对栅极温度进行微小变化，可以使源极和漏极之间的热流发生很大变化。
