半导体合金纳米带的横向异质结构用于高性能光探测器。
Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors.
机构信息
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province and State Key Laboratory of Chemo/biosensing and Chemometrics (CBSC), Hunan University, Changsha, 410082, P.R. China.
出版信息
Adv Mater. 2014 May;26(18):2844-9. doi: 10.1002/adma.201304967. Epub 2014 Feb 21.
PMID:24677130
Abstract
High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.
摘要
基于由两种不同半导体合金在横向外延生长而成的单纳米带横向异质结构，实现了高性能可见光光电探测器。与基于单组成结构的器件相比，它们表现出优越的光谱响应范围、响应率、离子/关比值和外量子效率。
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