Adv Mater. 2014 Mar 19;26(11):1660-80. doi: 10.1002/adma.201304665.
Recent studies of the bias-stress-driven electrical instability of organic field-effect transistors (OFETs) are reviewed. OFETs are operated under continuous gate and source/drain biases and these bias stresses degrade device performance. The principles underlying this bias instability are discussed, particularly the mechanisms of charge trapping. There are three main charge-trapping sites: the semiconductor, the dielectric, and the semiconductor-dielectric interface. The charge-trapping phenomena in these three regions are analyzed with special attention to the microstructural dependence of bias instability. Finally, possibilities for future research in this field are presented. This critical review aims to enhance our insight into bias-stress-induced charge trapping in OFETs with the aim of minimizing operational instability.
本文综述了有机场效应晶体管（OFET）的偏置-应力驱动电不稳定性的最新研究。OFET 在连续栅极和源极/漏极偏置下工作，这些偏置应力会降低器件性能。讨论了这种偏置不稳定性的基本原理，特别是电荷俘获机制。有三个主要的电荷俘获位点：半导体、电介质和半导体-电介质界面。这三个区域的电荷俘获现象进行了分析，特别关注了偏置不稳定性的微观结构依赖性。最后，提出了该领域未来研究的可能性。本综述旨在增强我们对 OFET 中偏置应力诱导电荷俘获的理解，以最小化操作不稳定性。
