铂中的自旋泵浦和逆自旋霍尔效应：金属界面处自旋记忆损失的重要作用。
Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces.
作者信息
Rojas-Sánchez J-C, Reyren N, Laczkowski P, Savero W, Attané J-P, Deranlot C, Jamet M, George J-M, Vila L, Jaffrès H
机构信息
INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble, France and Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France.
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud 11, 91767 Palaiseau, France.
出版信息
Phys Rev Lett. 2014 Mar 14;112(10):106602. doi: 10.1103/PhysRevLett.112.106602. Epub 2014 Mar 12.
Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of ℓsfPt=3.4±0.4 nm and θSHEPt=0.056±0.010 for the respective spin diffusion length and spin Hall angle for Pt. Our data and model emphasize the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.
通过在钴|铂双层膜和钴|铜|铂三层膜中进行的铁磁共振、自旋泵浦和逆自旋霍尔效应联合实验，我们证明了铂的自旋扩散长度ℓsfPt = 3.4±0.4 nm和自旋霍尔角θSHEPt = 0.056±0.010的一致值。我们的数据和模型强调了由于自旋记忆损失导致每个界面处自旋电流的部分去极化。我们的模型协调了先前发表的自旋霍尔角值，并解释了铁磁阻尼和自旋霍尔效应感应电压的不同标度长度。
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