应变对BiFeO₃基异质结构中压控磁性的影响。
Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.
作者信息
Wang J J, Hu J M, Yang T N, Feng M, Zhang J X, Chen L Q, Nan C W
机构信息
1] State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China [2].
1] State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China [2] Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA [3].
出版信息
Sci Rep. 2014 Apr 1;4:4553. doi: 10.1038/srep04553.
Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.
磁性/BiFeO₃异质结构中的电压调制磁性可由BiFeO₃中固有的铁电-反铁磁耦合以及异质界面处的反铁磁-铁磁交换相互作用共同驱动。然而，铁电BiFeO₃薄膜也是铁弹性的，因此有可能在BiFeO₃中产生电压诱导应变，该应变可施加到异质界面另一侧的磁性层上，并通过磁弹性耦合调制磁性。在此，我们使用相场模拟研究了应变在这些基于BiFeO₃的异质结构的电压控制磁性中的作用。据预测，在一定条件下，应变和交换相互作用的共存将导致基于BiFeO₃的异质结构中出现纯电压驱动的180°磁化反转。
Zotero 插件