Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.
State Key Laboratory for Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China.
Adv Mater. 2019 Mar;31(11):e1806335. doi: 10.1002/adma.201806335. Epub 2019 Jan 21.
Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO (BFO) and La Sr MnO (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
电场控制磁性最终为降低存储和逻辑设备的能耗开辟了可能性。在 BiFeO (BFO) 和 LaSrMnO (LSMO) 的全氧化物异质结构中已经证明了对磁化和交换偏置的电场控制。然而，在铁电（ME）耦合中，极性异质界面的作用还没有被充分探索。在这里，通过在原子尺度上利用界面工程，研究了具有两种界面的 BFO/LSMO 异质结构中的 ME 耦合。结果表明，通过反转 BFO 的铁电极化可以实现对磁化和交换偏置的可逆控制。有趣的是，观察到了依赖于界面原子序列的截然不同的调制行为。这些结果为模型系统中 ME 耦合的基础物理提供了新的见解。本研究强调了在原子尺度上设计界面对于功能性自旋电子器件的普遍重要性。
