Department of Electrical and Computer Engineering, University of Alberta , Edmonton, Alberta T6G 2V4, Canada.
Nano Lett. 2014 May 14;14(5):2233-41. doi: 10.1021/nl4030853. Epub 2014 Apr 10.
Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of ∼10(4)% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).
强磁电阻效应在铁磁-非磁多层膜中经常被观察到，这在最先进的磁场传感和数据存储技术中得到了应用。在这项工作中，我们报告了一种在催化镍表面通过化学气相沉积生长的多层石墨烯中出现的新型电流垂直于平面的磁电阻效应。观察到约 10(4)%的负磁电阻效应，即使在室温下也能保持。这种效应与 2D 峰的形状以及拉曼光谱中 D 峰的出现有关。与类似温度和磁场范围内的其他已知材料体系相比，观察到的磁电阻非常高，可以在“层间磁电阻”（ILMR）的框架内定性地解释。
