多层外延石墨烯中的量子线性磁电阻。

Quantum linear magnetoresistance in multilayer epitaxial graphene.

机构信息

Code 6876, U.S. Naval Research Laboratory, Washington, DC 20375, USA.

出版信息

Nano Lett. 2010 Oct 13;10(10):3962-5. doi: 10.1021/nl101797d.

PMID:20804213

Abstract

We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene film. The large magnitude of the LMR suggests potential for novel applications in areas such as high-density data storage and magnetic sensors and actuators.

摘要

我们首次观察到在 SiC 上外延生长的多层石墨烯的线性磁阻（LMR）。我们表明，多层外延石墨烯在 2.2 K 到室温范围内表现出大的 LMR，并且可以用纯粹的量子力学模型来最好地解释。我们将 LMR 的观察归因于外延生长石墨烯膜中的不均匀性。大的 LMR 表明在高密度数据存储和磁传感器和执行器等领域具有潜在的应用。