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利用 Si 峰分析对 CVD 生长的多层石墨烯进行层厚识别。

Layer number identification of CVD-grown multilayer graphene using Si peak analysis.

机构信息

Department of Physics, Konkuk University, Seoul, 05029, Korea.

Emerging Devices Research Group, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Korea.

出版信息

Sci Rep. 2018 Jan 12;8(1):571. doi: 10.1038/s41598-017-19084-1.

DOI:10.1038/s41598-017-19084-1
PMID:29330376
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5766578/
Abstract

Since the successful exfoliation of graphene, various methodologies have been developed to identify the number of layers of exfoliated graphene. The optical contrast, Raman G-peak intensity, and 2D-peak line-shape are currently widely used as the first level of inspection for graphene samples. Although the combination analysis of G- and 2D-peaks is powerful for exfoliated graphene samples, its use is limited in chemical vapor deposition (CVD)-grown graphene because CVD-grown graphene consists of various domains with randomly rotated crystallographic axes between layers, which makes the G- and 2D-peaks analysis difficult for use in number identification. We report herein that the Raman Si-peak intensity can be a universal measure for the number identification of multilayered graphene. We synthesized a few-layered graphene via the CVD method and performed Raman spectroscopy. Moreover, we measured the Si-peak intensities from various individual graphene domains and correlated them with the corresponding layer numbers. We then compared the normalized Si-peak intensity of the CVD-grown multilayer graphene with the exfoliated multilayer graphene as a reference and successfully identified the layer number of the CVD-grown graphene. We believe that this Si-peak analysis can be further applied to various 2-dimensional (2D) materials prepared by both exfoliation and chemical growth.

摘要

自从石墨烯成功剥离以来,已经开发出了各种方法来确定剥离石墨烯的层数。目前,光学对比度、拉曼 G 峰强度和 2D 峰线形状被广泛用作石墨烯样品的初步检查手段。尽管 G 峰和 2D 峰的组合分析对于剥离石墨烯样品非常有效,但在化学气相沉积(CVD)生长的石墨烯中,其应用受到限制,因为 CVD 生长的石墨烯由不同的畴组成,畴之间的层状晶轴随机旋转,这使得 G 峰和 2D 峰分析难以用于层数识别。我们在此报告,拉曼 Si 峰强度可以作为多层石墨烯层数识别的通用衡量标准。我们通过 CVD 方法合成了少层石墨烯,并进行了拉曼光谱测量。此外,我们测量了来自不同单个石墨烯畴的 Si 峰强度,并将其与相应的层数相关联。然后,我们将 CVD 生长的多层石墨烯的归一化 Si 峰强度与作为参考的剥离多层石墨烯进行了比较,并成功地识别了 CVD 生长石墨烯的层数。我们相信,这种 Si 峰分析可以进一步应用于通过剥离和化学生长制备的各种二维(2D)材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/7a5c871d17d8/41598_2017_19084_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/dada59bcd971/41598_2017_19084_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/c2f1c43ec54f/41598_2017_19084_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/033eae7c3f7a/41598_2017_19084_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/35c259af7f5a/41598_2017_19084_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/7a5c871d17d8/41598_2017_19084_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/dada59bcd971/41598_2017_19084_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/c2f1c43ec54f/41598_2017_19084_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/033eae7c3f7a/41598_2017_19084_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/35c259af7f5a/41598_2017_19084_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2b7d/5766578/7a5c871d17d8/41598_2017_19084_Fig5_HTML.jpg

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