Yu Yang, Bian Lin-Yi, Chen Jian-Guo, Ma Qi-Hao, Li Yin-Xiang, Ling Hai-Feng, Feng Quan-You, Xie Ling-Hai, Yi Ming-Dong, Huang Wei
Centre for Molecular Systems and Organic Devices (CMSOD) Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications 9 Wenyuan Road Nanjing 210023 P. R. China.
Shaanxi Institute of Flexible Electronics (SIFE) Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi'an 710072 P. R. China.
Adv Sci (Weinh). 2018 Sep 6;5(12):1800747. doi: 10.1002/advs.201800747. eCollection 2018 Dec.
Three diazafluorene derivatives triphenylamine (TPA)(PDAF) ( = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel-Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF) shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field-effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. As charge storage elements, triphenylamine groups provide the hole trapping sites, while diazafluorene units provide the electron trapping sites and act as a hole blocking group to restrain the leakage of stored holes trapped in triphenylamine. The pentacene-based OFET memory device with solution-processing TPA(PDAF) shows a good hole-trapping ability, high hole trapping density (4.55 × 10 cm), fast trapping speed (<20 ms), a large memory window (89 V), and a tunable ambipolar memory behavior. The optimized device shows a large ON/OFF current ratio (2.85 × 10), good charge retention (>10 s), and reliable endurance properties. This study suggests that diazafluorene based donor-acceptor small molecular elements have great promise for high-performance OFET memory.
通过浓硫酸介导的傅克反应设计并合成了三种作为小分子元件的二氮杂芴衍生物三苯胺(TPA)(PDAF)( = 1, 2, 3)。TPA(PDAF)具有高度非平面的拓扑结构,在固态中表现出较弱的分子间相互作用,因此呈现出单纳米分子行为,这对于在有机场效应晶体管(OFET)存储器件中存储和保留电荷至关重要。此外,二氮杂芴衍生物具有完全分离的最高占据分子轨道/最低未占据分子轨道,提供了理想的空穴和电子俘获位点。作为电荷存储元件,三苯胺基团提供空穴俘获位点,而二氮杂芴单元提供电子俘获位点,并作为空穴阻挡基团来抑制捕获在三苯胺中的存储空穴的泄漏。具有溶液处理TPA(PDAF)的并五苯基OFET存储器件表现出良好的空穴俘获能力、高空穴俘获密度(4.55×10 cm)、快速俘获速度(<20 ms)、大存储窗口(89 V)和可调的双极性存储行为。优化后的器件显示出大的开/关电流比(2.85×10)、良好的电荷保持能力(>10 s)和可靠的耐久性。这项研究表明,基于二氮杂芴的供体-受体小分子元件在高性能OFET存储方面具有巨大潜力。