Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang 11800, Malaysia.
Nanoscale Res Lett. 2014 Apr 11;9(1):175. doi: 10.1186/1556-276X-9-175.
Indium tin oxide (ITO) and titanium dioxide (TiO2) anti-reflective coatings (ARCs) were deposited on a (100) P-type monocrystalline Si substrate by a radio-frequency (RF) magnetron sputtering. Polycrystalline ITO and anatase TiO2 films were obtained at room temperature (RT). The thickness of ITO (60 to 64 nm) and TiO2 (55 to 60 nm) films was optimized, considering the optical response in the 400- to 1,000-nm wavelength range. The deposited films were characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM). The XRD analysis showed preferential orientation along (211) and (222) for ITO and (200) and (211) for TiO2 films. The XRD analysis showed that crystalline ITO/TiO2 films could be formed at RT. The crystallite strain measurements showed compressive strain for ITO and TiO2 films. The measured average optical reflectance was about 12% and 10% for the ITO and TiO2 ARCs, respectively.
铟锡氧化物(ITO)和二氧化钛(TiO2)抗反射涂层(ARC)通过射频(RF)磁控溅射沉积在(100)P 型单晶 Si 衬底上。多晶 ITO 和锐钛矿 TiO2 薄膜在室温(RT)下获得。考虑到 400 到 1000nm 波长范围内的光学响应,优化了 ITO(60 到 64nm)和 TiO2(55 到 60nm)薄膜的厚度。通过 X 射线衍射(XRD)、拉曼光谱、场发射扫描电子显微镜(FESEM)、能谱(EDS)和原子力显微镜(AFM)对沉积的薄膜进行了表征。XRD 分析表明,ITO 沿(211)和(222)方向优先取向,TiO2 沿(200)和(211)方向取向。XRD 分析表明,在 RT 下可以形成结晶 ITO/TiO2 薄膜。晶粒度应变测量表明 ITO 和 TiO2 薄膜存在压应变。ITO 和 TiO2 ARC 的平均光学反射率分别约为 12%和 10%。