Tang Zhensen, Chi Yaqing, Fang Liang, Liu Rulin, Yi Xun
J Nanosci Nanotechnol. 2014 Feb;14(2):1494-507. doi: 10.1166/jnn.2014.9116.
Resistive switching (RS) phenomena have been vigorously investigated in a large variety of materials and highlighted for its preeminent potential for the future nonvolatile semiconductor memory applications or reconfigurable logic circuits. Among the various resistive switching materials, the binary metal oxides demonstrate more advantageous for micro- or nano-electronics applications due to their simpler fabrication process and compatibility with conventional CMOS technology, though the mechanisms are controversial due to the diversity of RS effects. This review mainly focuses on the current understanding of the microscopic nature of RS in titanium oxides, in which the working mechanisms can be categorized into thermochemical metallization mechanism, valence change mechanism, and electrostatic/electronic mechanism. The approaches developed to investigate the RS and the specific switching processes related to different mechanisms are addressed. Since titanium oxides are oxygen-vacancy doped semiconductors, the role of defects is analyzed in detail and possible effective strategies to improve the performance of RS are addressed.
电阻开关（RS）现象已在多种材料中得到深入研究，并因其在未来非易失性半导体存储器应用或可重构逻辑电路方面的卓越潜力而备受关注。在各种电阻开关材料中，二元金属氧化物因其制造工艺更简单且与传统CMOS技术兼容，在微纳电子应用中表现出更大优势，尽管由于电阻开关效应的多样性，其机制仍存在争议。本综述主要聚焦于当前对氧化钛中电阻开关微观本质的理解，其中工作机制可分为热化学金属化机制、价态变化机制和静电/电子机制。文中阐述了用于研究电阻开关的方法以及与不同机制相关的特定开关过程。由于氧化钛是氧空位掺杂的半导体，文中详细分析了缺陷的作用，并探讨了提高电阻开关性能的可能有效策略。
