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限制铝上薄氧化膜厚度的机制。

Mechanism for limiting thickness of thin oxide films on aluminum.

机构信息

Department of Applied Physics and Competence Centre for Catalysis, Chalmers University of Technology, SE-412 96 Göteborg, Sweden.

出版信息

Phys Rev Lett. 2014 Apr 11;112(14):146103. doi: 10.1103/PhysRevLett.112.146103. Epub 2014 Apr 9.

Abstract

A first-principles account of the observed limiting thickness of oxide films formed on aluminum during oxidizing conditions is presented. The results uncover enhanced bonding of oxygen to thin alumina films in contact with metallic aluminum that stems from charge transfer between a reconstructed oxide-metal interface and the adsorbed molecules. The first-principles results are compared with the traditional Cabrera-Mott (CM) model, which is a classical continuum model. Within the CM model, charged surface oxygen species and metal ions generate a (Mott) potential that drives oxidation. An apparent limiting thickness is observed as the oxidation rate decreases rapidly with film growth. The present results support experimental estimates of the Mott potential and film thicknesses. In contrast to the CM model, however, the calculations reveal a real limiting thickness that originates from a diminishing oxygen adsorption energy beyond a certain oxide film thickness.

摘要

提出了一种基于第一性原理的方法来解释在氧化条件下形成的氧化铝膜的观察到的极限厚度。研究结果揭示了与金属铝接触的薄氧化铝膜中氧的增强键合,这源于重构氧化物-金属界面和吸附分子之间的电荷转移。第一性原理结果与传统的卡伯拉-莫特(CM)模型进行了比较,CM 模型是一种经典的连续体模型。在 CM 模型中,带电荷的表面氧物种和金属离子产生一个(Mott)势,驱动氧化。随着膜生长,氧化速率迅速下降,观察到明显的极限厚度。本研究结果支持了对 Mott 势和薄膜厚度的实验估计。然而,与 CM 模型不同的是,计算结果揭示了一个真实的极限厚度,这源于在一定的氧化膜厚度之后氧吸附能的减小。

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