Geiger Michael, Hagel Marion, Reindl Thomas, Weis Jürgen, Weitz R Thomas, Solodenko Helena, Schmitz Guido, Zschieschang Ute, Klauk Hagen, Acharya Rachana
Max Planck Institute for Solid State Research, Stuttgart, Germany.
The 1st Physical Institute, University of Göttingen, Göttingen, Germany.
Sci Rep. 2021 Mar 18;11(1):6382. doi: 10.1038/s41598-021-85517-7.
A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current-voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
有机薄膜晶体管（TFT）在移动或可穿戴应用中的一个关键要求是低电压操作，这可以通过采用超薄、高电容的栅极电介质来实现。一种选择是由氧化铝薄膜和分子自组装单分子层组成的混合电介质，其中氧化铝是通过将铝栅电极表面暴露于射频产生的氧等离子体中形成的。这项工作研究了这种电介质的性能如何受到等离子体功率和等离子体暴露持续时间的影响。对于等离子体功率和持续时间的各种组合，已经评估了电介质的厚度和电容、通过电介质的漏电流密度以及以这些电介质作为栅极绝缘体的有机TFT的电流-电压特性。还研究了等离子体参数对电介质表面性能、真空沉积有机半导体薄膜的薄膜形态以及由此产生的TFT特性的影响。
