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垂直排列碳纳米管上原子层沉积过程的建模与优化。

Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes.

机构信息

Nanoscience for Energy Technology and Sustainability, Department of Mechanical and Process Engineering, ETH Zürich, Zürich CH-8092, Switzerland ; Laboratory for Nanoelectronics, Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich CH-8092, Switzerland.

Laboratory for Mechanics of Materials and Nanostructures, EMPA, Thun CH-3602, Switzerland.

出版信息

Beilstein J Nanotechnol. 2014 Mar 5;5:234-44. doi: 10.3762/bjnano.5.25. eCollection 2014.

DOI:10.3762/bjnano.5.25
PMID:24778944
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3999849/
Abstract

Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays.

摘要

许多能量转换和存储设备都利用具有大界面表面积的结构化陶瓷。垂直排列的碳纳米管 (VACNT) 阵列已成为支持大表面积陶瓷层的可能支架。然而,即使使用原子层沉积 (ALD),在具有高纵横比形貌的结构上获得陶瓷的保形和均匀涂层也并非易事。在这里,我们实施了一个扩散模型来研究 ALD 参数对涂层动力学的影响,并利用它来开发一种在超高纵横比结构的整个深度实现保形和均匀厚度涂层的指南。我们使用 VACNT 阵列的 ALD 涂层的实验数据验证了模型预测。然而,该方法可用于预测任何多孔拓扑(包括纳米孔和纳米线阵列)的膜保形性作为深度的函数。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/8cf9bf99cf00/Beilstein_J_Nanotechnol-05-234-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/5c50f69e4611/Beilstein_J_Nanotechnol-05-234-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/863ac971275b/Beilstein_J_Nanotechnol-05-234-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/e78133333338/Beilstein_J_Nanotechnol-05-234-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/68c0592ba253/Beilstein_J_Nanotechnol-05-234-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/12038998daf9/Beilstein_J_Nanotechnol-05-234-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/8cf9bf99cf00/Beilstein_J_Nanotechnol-05-234-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/5c50f69e4611/Beilstein_J_Nanotechnol-05-234-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/863ac971275b/Beilstein_J_Nanotechnol-05-234-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/e78133333338/Beilstein_J_Nanotechnol-05-234-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/68c0592ba253/Beilstein_J_Nanotechnol-05-234-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/12038998daf9/Beilstein_J_Nanotechnol-05-234-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/28fd/3999849/8cf9bf99cf00/Beilstein_J_Nanotechnol-05-234-g007.jpg

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