Wang Xinran, Tabakman Scott M, Dai Hongjie
Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
J Am Chem Soc. 2008 Jul 2;130(26):8152-3. doi: 10.1021/ja8023059. Epub 2008 Jun 5.
We investigate atomic layer deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize the graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over a large area. The functionalization method could be used to integrate ultrathin high-kappa dielectrics in future graphene electronics.
我们研究了在原始和功能化石墨烯上金属氧化物的原子层沉积（ALD）。在原始石墨烯上，ALD涂层仅能在边缘和缺陷位点上积极生长，在这些位点上，悬空键或表面基团会与ALD前驱体发生反应。这提供了一种装饰和探测石墨烯平面中单个缺陷位点的简单方法。我们使用苝四羧酸（PTCA）对石墨烯表面进行功能化，并在石墨烯上选择性地引入了密集堆积的表面基团。在大面积的PTCA功能化石墨烯上实现了均匀的超薄ALD涂层。这种功能化方法可用于在未来的石墨烯电子器件中集成超薄高介电常数电介质。
