Vo-Dinh Tuan, Dhawan Anuj, Norton Stephen J, Khoury Christopher G, Wang Hsin-Neng, Misra Veena, Gerhold Michael D
Fitzpatrick Institute for Photonics, Departments of Biomedical Engineering and Chemistry, Duke University, Durham, NC 27708, USA.
Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27606, USA.
J Phys Chem C Nanomater Interfaces. 2010 Apr 29;114(16):7480-7488. doi: 10.1021/jp911355q.
This study involves two aspects of our investigations of plasmonics-active systems: (i) theoretical and simulation studies and (ii) experimental fabrication of plasmonics-active nanostructures. Two types of nanostructures are selected as the model systems for their unique plasmonics properties: (1) nanoparticles and (2) nanowires on substrate. Special focus is devoted to regions where the electromagnetic field is strongly concentrated by the metallic nanostructures or between nanostructures. The theoretical investigations deal with dimers of nanoparticles and nanoshells using a semi-analytical method based on a multipole expansion (ME) and the finite-element method (FEM) in order to determine the electromagnetic enhancement, especially at the interface areas of two adjacent nanoparticles. The experimental study involves the design of plasmonics-active nanowire arrays on substrates that can provide efficient electromagnetic enhancement in regions around and between the nanostructures. Fabrication of these nanowire structures over large chip-scale areas (from a few millimeters to a few centimeters) as well as FDTD simulations to estimate the EM fields between the nanowires are described. The application of these nanowire chips using surface-enhanced Raman scattering (SERS) for detection of chemicals and labeled DNA molecules is described to illustrate the potential of the plasmonics chips for sensing.
(i)理论和模拟研究,以及(ii)等离激元活性纳米结构的实验制备。选择两种类型的纳米结构作为具有独特等离激元特性的模型系统:(1)纳米颗粒和(2)基底上的纳米线。特别关注金属纳米结构或纳米结构之间电磁场强烈集中的区域。理论研究使用基于多极展开(ME)和有限元方法(FEM)的半解析方法处理纳米颗粒二聚体和纳米壳,以确定电磁增强,特别是在两个相邻纳米颗粒的界面区域。实验研究涉及在基底上设计等离激元活性纳米线阵列,该阵列可在纳米结构周围和之间的区域提供有效的电磁增强。描述了在大芯片尺度区域(从几毫米到几厘米)上制备这些纳米线结构以及用于估计纳米线之间电磁场的FDTD模拟。描述了使用这些纳米线芯片通过表面增强拉曼散射(SERS)检测化学物质和标记DNA分子,以说明等离激元芯片在传感方面的潜力。