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在等离子体纳米结构阵列中同时实现高传感灵敏度和可调性。

Simultaneous realization of high sensing sensitivity and tunability in plasmonic nanostructures arrays.

作者信息

Chau Yuan-Fong Chou, Wang Chan-Kuang, Shen Linfang, Lim Chee Ming, Chiang Hai-Pang, Chao Chung-Ting Chou, Huang Hung Ji, Lin Chun-Ting, Kumara N T R N, Voo Nyuk Yoong

机构信息

Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Tungku Link, Gadong, BE1410, Negara Brunei Darussalam.

Department of Electronic Engineering, Chien Hsin University of Science and Technology, No. 229, Jianxing Rd., Zhongli City, Taoyuan County, 32097, Taiwan (R.O.C.).

出版信息

Sci Rep. 2017 Dec 1;7(1):16817. doi: 10.1038/s41598-017-17024-7.

Abstract

A plasmonic nanostructure (PNS) which integrates metallic and dielectric media within a single structure has been shown to exhibit specific plasmonic properties which are considered useful in refractive index (RI) sensor applications. In this paper, the simultaneous realization of sensitivity and tunability of the optical properties of PNSs consisting of alternative Ag and dielectric of nanosphere/nanorod array have been proposed and compared by using three-dimensional finite element method. The proposed system can support plasmonic hybrid modes and the localized surface plasmonic resonances and cavity plasmonic resonances within the individual PNS can be excited by the incident light. The proposed PNSs can be operated as RI sensor with a sensitivity of 500 nm/RIU (RIU = refractive index unit) ranging from UV to the near-infrared. In addition, a narrow bandwidth and nearly zero transmittance along with a high absorptance can be achieved by a denser PNSs configuration in the unit cell of PNS arrays. We have demonstrated the number of modes sustained in the PNS system, as well as, the near-field distribution can be tailored by the dielectric media in PNSs.

摘要

一种在单一结构中集成了金属和电介质的等离子体纳米结构(PNS)已被证明具有特定的等离子体特性,这些特性在折射率(RI)传感器应用中被认为是有用的。在本文中,通过使用三维有限元方法,对由交替的银和纳米球/纳米棒阵列电介质组成的PNS光学特性的灵敏度和可调性的同时实现进行了研究和比较。所提出的系统可以支持等离子体混合模式,并且入射光可以激发单个PNS内的局域表面等离子体共振和腔等离子体共振。所提出的PNS可以用作RI传感器,其灵敏度为500 nm/RIU(RIU = 折射率单位),范围从紫外到近红外。此外,通过在PNS阵列的单位晶胞中采用更密集的PNS配置,可以实现窄带宽、几乎为零的透射率以及高吸收率。我们已经证明了PNS系统中维持的模式数量,以及近场分布可以通过PNS中的电介质进行调整。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c39c/5711893/0aced563090e/41598_2017_17024_Fig1_HTML.jpg

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