Sun Leimeng, Fan Yu, Wang Xinghui, Agung Susantyoko Rahmat, Zhang Qing
Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
Nanotechnology. 2014 Jun 27;25(25):255302. doi: 10.1088/0957-4484/25/25/255302. Epub 2014 Jun 4.
We report on a novel solution etching method to fabricate vertically aligned aperiodic silicon nanowire (SiNW) arrays. We begin with a simple dewetting process to fabricate a monolayer of well-spaced metal particles in situ on a silicon wafer. The particles function as a sacrificial template to pattern a Ti/Au catalyst film into a metal mesh and the size of particles directly determines the diameter of SiNW. A conventional metal-assisted chemical etching process is then carried out with the obtained metal mesh as a catalyst to realize a vertically aligned SiNW array at a large scale and low cost.
我们报道了一种用于制备垂直排列的非周期性硅纳米线(SiNW)阵列的新型溶液蚀刻方法。我们首先通过一个简单的去湿过程,在硅片上原位制备出一层间距良好的金属颗粒单层。这些颗粒作为牺牲模板,将Ti/Au催化剂膜图案化为金属网格,颗粒的尺寸直接决定了SiNW的直径。然后,以获得的金属网格作为催化剂,进行传统的金属辅助化学蚀刻过程,以大规模、低成本地实现垂直排列的SiNW阵列。