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直径可控的硅纳米线阵列的大规模低成本制造。

Large scale low cost fabrication of diameter controllable silicon nanowire arrays.

作者信息

Sun Leimeng, Fan Yu, Wang Xinghui, Agung Susantyoko Rahmat, Zhang Qing

机构信息

Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.

出版信息

Nanotechnology. 2014 Jun 27;25(25):255302. doi: 10.1088/0957-4484/25/25/255302. Epub 2014 Jun 4.

DOI:10.1088/0957-4484/25/25/255302
PMID:24896291
Abstract

We report on a novel solution etching method to fabricate vertically aligned aperiodic silicon nanowire (SiNW) arrays. We begin with a simple dewetting process to fabricate a monolayer of well-spaced metal particles in situ on a silicon wafer. The particles function as a sacrificial template to pattern a Ti/Au catalyst film into a metal mesh and the size of particles directly determines the diameter of SiNW. A conventional metal-assisted chemical etching process is then carried out with the obtained metal mesh as a catalyst to realize a vertically aligned SiNW array at a large scale and low cost.

摘要

我们报道了一种用于制备垂直排列的非周期性硅纳米线(SiNW)阵列的新型溶液蚀刻方法。我们首先通过一个简单的去湿过程,在硅片上原位制备出一层间距良好的金属颗粒单层。这些颗粒作为牺牲模板,将Ti/Au催化剂膜图案化为金属网格,颗粒的尺寸直接决定了SiNW的直径。然后,以获得的金属网格作为催化剂,进行传统的金属辅助化学蚀刻过程,以大规模、低成本地实现垂直排列的SiNW阵列。

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