Fang Hui, Li Xudong, Song Shuang, Xu Ying, Zhu Jing
Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084, People's Republic of China. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
Nanotechnology. 2008 Jun 25;19(25):255703. doi: 10.1088/0957-4484/19/25/255703. Epub 2008 May 15.
Large-area slantingly-aligned silicon nanowire arrays (SA-SiNW arrays) on Si(111) substrate have been fabricated by wet chemical etching with dry metal deposition method and employed in the fabrication of solar cells for the first time. The formation of SA-SiNW arrays possibly results from the anisotropic etching of silicon by silver catalysts. Superior to the previous cells fabricated with vertically-aligned silicon nanowire arrays (VA-SiNW arrays), the SA-SiNW array solar cells exhibit a highest power conversion efficiency of 11.37%. The improved device performance is attributed to the integration of the excellent anti-reflection property of the arrays and the better electrical contact of the cell as a result of the special slantingly-aligned structure. The high surface recombination velocity of minority carriers in SiNW arrays is still the main limitation on cell performance.
通过湿化学蚀刻结合干金属沉积法，在硅（111）衬底上制备了大面积倾斜排列的硅纳米线阵列（SA-SiNW阵列），并首次将其应用于太阳能电池的制造。SA-SiNW阵列的形成可能源于银催化剂对硅的各向异性蚀刻。与之前用垂直排列的硅纳米线阵列（VA-SiNW阵列）制造的电池相比，SA-SiNW阵列太阳能电池展现出了11.37%的最高功率转换效率。器件性能的提升归因于阵列优异的抗反射特性以及特殊倾斜排列结构带来的电池更好的电接触。硅纳米线阵列中少数载流子的高表面复合速度仍然是电池性能的主要限制因素。
