Togonal A S, He Lining, Roca i Cabarrocas Pere
School of Electrical and Electronics Engineering, Nanyang Technological University , Block S1, 50 Nanyang Avenue, Singapore 639798.
Langmuir. 2014 Sep 2;30(34):10290-8. doi: 10.1021/la501768f. Epub 2014 Aug 20.
The effect of wettability on the undesirable bundling of silicon nanowire (SiNW) arrays fabricated by metal-assisted chemical etching (MACE) method is investigated. This paper reports a simple and low-cost approach to achieve dense SiNW arrays with excellent lateral separation. A hydrophilic pretreatment on the initial wafer substrate prior to the etching procedure, followed by a hydrophobic post-treatment of the fabricated SiNWs, allows the fabrication of large and dense arrays of SiNWs with no agglomeration. These results are discussed within the framework of the detailed balance of forces acting on the nanowires.
研究了润湿性对通过金属辅助化学蚀刻(MACE)方法制备的硅纳米线(SiNW)阵列不良团聚的影响。本文报道了一种简单且低成本的方法来实现具有出色横向间距的密集SiNW阵列。在蚀刻程序之前对初始晶圆衬底进行亲水性预处理,然后对制备的SiNW进行疏水性后处理,可以制备出无团聚的大型密集SiNW阵列。在作用于纳米线的力的详细平衡框架内讨论了这些结果。