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Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO2 nanowires.

作者信息

Lu Junpeng, Liu Hongwei, Deng Suzi, Zheng Minrui, Wang Yinghui, van Kan Jeroen A, Tang Sing Hai, Zhang Xinhai, Sow Chorng Haur, Mhaisalkar Subodh G

机构信息

Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore.

出版信息

Nanoscale. 2014 Jul 7;6(13):7619-27. doi: 10.1039/c4nr00898g.

DOI:10.1039/c4nr00898g
PMID:24896423
Abstract

In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO2 single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitations (405 nm, 532 nm, and 660 nm). The phototransistor device exhibited ultrafast photoresponse, high responsivity, broad multispectral response, and rapid saturation characteristic curves. These promising results help to promote the applications of this material in nano-scale optoelectronic devices such as efficient multispectral phototransistors and optical switches.

摘要

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