通过键合有源层再生长InP在SiO₂/Si衬底上制备的直接调制掩埋异质结构分布反馈激光器。

Directly modulated buried heterostructure DFB laser on SiO₂/Si substrate fabricated by regrowth of InP using bonded active layer.

作者信息

Matsuo Shinji, Fujii Takuro, Hasebe Koichi, Takeda Koji, Sato Tomonari, Kakitsuka Takaaki

出版信息

Opt Express. 2014 May 19;22(10):12139-47. doi: 10.1364/OE.22.012139.

DOI:10.1364/OE.22.012139

Abstract

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.

摘要

我们描述了使用超薄III-V族有源层生长InP层的方法，该有源层直接键合到SiO₂/Si衬底上以制造掩埋异质结构（BH）激光器。使用250纳米厚的键合有源层，我们成功地在SiO₂/Si衬底上制造了一个BH分布反馈（DFB）激光器。使用横向电流注入结构对于利用键合薄膜形成p-i-n结很重要。所制造的DFB激光器在50°C下由25.8 Gbit/s的NRZ信号直接调制。这些结果表明，我们的制造方法是一种以低成本制造高效激光器的有前途的方法。