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用于植入深部脑刺激器患者的并行发射脉冲设计

Parallel transmit pulse design for patients with deep brain stimulation implants.

作者信息

Eryaman Yigitcan, Guerin Bastien, Akgun Can, Herraiz Joaquin L, Martin Adrian, Torrado-Carvajal Angel, Malpica Norberto, Hernandez-Tamames Juan A, Schiavi Emanuele, Adalsteinsson Elfar, Wald Lawrence L

机构信息

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA; A. A. Martinos Center for Biomedical Imaging, Department of Radiology, Massachusetts General Hospital, Charlestown, Massachusetts, USA; Madrid-MIT M+ Vision Consortium, Madrid, Spain.

出版信息

Magn Reson Med. 2015 May;73(5):1896-903. doi: 10.1002/mrm.25324. Epub 2014 Jun 19.

Abstract

PURPOSE

Specific absorption rate (SAR) amplification around active implantable medical devices during diagnostic MRI procedures poses a potential risk for patient safety. In this study, we present a parallel transmit (pTx) strategy that can be used to safely scan patients with deep brain stimulation (DBS) implants.

METHODS

We performed electromagnetic simulations at 3T using a uniform phantom and a multitissue realistic head model with a generic DBS implant. Our strategy is based on using implant-friendly modes, which are defined as the modes of an array that reduce the local SAR around the DBS lead tip. These modes are used in a spokes pulse design algorithm in order to produce highly uniform magnitude least-squares flip angle excitations.

RESULTS

Local SAR (1 g) at the lead tip is reduced below 0.1 W/kg compared with 31.2 W/kg, which is obtained by a simple quadrature birdcage excitation without any sort of SAR mitigation. For the multitissue realistic head model, peak 10 g local SAR and global SAR are obtained as 4.52 W/kg and 0.48 W/kg, respectively. A uniform axial flip angle is also obtained (NRMSE <3%).

CONCLUSION

Parallel transmit arrays can be used to generate implant-friendly modes and to reduce SAR around DBS implants while constraining peak local SAR and global SAR and maximizing flip angle homogeneity.

摘要

目的

在诊断性磁共振成像(MRI)检查过程中,有源植入式医疗设备周围的比吸收率(SAR)放大对患者安全构成潜在风险。在本研究中,我们提出了一种并行发射(pTx)策略,可用于对植入脑深部电刺激(DBS)设备的患者进行安全扫描。

方法

我们使用均匀体模和带有通用DBS植入物的多组织真实头部模型在3T下进行了电磁模拟。我们的策略基于使用对植入物友好的模式,这些模式被定义为可降低DBS导线尖端周围局部SAR的阵列模式。这些模式用于辐条脉冲设计算法,以产生高度均匀的幅度最小二乘翻转角激励。

结果

与通过简单正交鸟笼激励且未采取任何SAR缓解措施所获得的31.2W/kg相比,导线尖端处的局部SAR(1g)降低至0.1W/kg以下。对于多组织真实头部模型,分别获得的10g局部SAR峰值和全局SAR为4.52W/kg和0.48W/kg。还获得了均匀的轴向翻转角(归一化均方根误差<3%)。

结论

并行发射阵列可用于生成对植入物友好的模式,并降低DBS植入物周围的SAR,同时限制局部SAR峰值和全局SAR,并使翻转角均匀性最大化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9ef7/4760103/455ef759ec53/nihms-600993-f0001.jpg

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