Department of Photonics, Research Center Energy Technology and Strategy, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
Nanoscale Res Lett. 2014 May 17;9(1):242. doi: 10.1186/1556-276X-9-242. eCollection 2014.
The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained.
提出并采用简易自对准光刻技术和激光干涉光刻技术来制备多栅 ZnO 金属氧化物半导体场效应晶体管（MOSFET）。由于多栅结构可以改善 ZnO 沟道沿程的电场分布，因此可以提高 ZnO MOSFET 的性能。多栅 ZnO MOSFET 的性能优于传统的单栅 ZnO MOSFET。多栅 ZnO MOSFET 获得了更高的漏源饱和电流（12.41 mA/mm）、更高的跨导（5.35 mS/mm）和更低的反常关断电流（5.7 μA/mm）。
