Nguyen Huu Trung, Yamada Hisashi, Yamada Toshikazu, Takahashi Tokio, Shimizu Mitsuaki
GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan.
Materials (Basel). 2020 Feb 18;13(4):899. doi: 10.3390/ma13040899.
We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm/V·s, subthreshold of 500 mV/dec, and transconductance of 14 μs/mm are measured in GaN-MOSFETs based on the implantation technique. Meanwhile, the GaN-MOSFETs fabricated using the regrowth method perform the electron mobility, transconductance, and subthreshold of 120 cm/V s, 18 μs/mm, and 300 mV/dec, respectively. Additionally, the MOSFETs with the regrown p-GaN gate body show the I/I ratio of approximately 4 × 10 which is, to our knowledge, among the best results of GaN-MOSFETs to date. This research contributes a valuable information for the design and fabrication of power switching devices based on GaN.
我们已经展示了使用选择性区域再生长和离子注入技术在同质外延氮化镓（GaN）衬底上制备的增强型n沟道氮化镓金属氧化物场效应晶体管（MOSFET）。这两种类型的MOSFET均实现常关操作。采用再生长方法制备的GaN-MOSFET比采用离子注入技术制备的其他相关器件具有更优异的特性。基于注入技术的GaN-MOSFET测得电子迁移率为100 cm²/V·s、亚阈值摆幅为500 mV/dec、跨导为14 μS/mm。同时，采用再生长方法制备的GaN-MOSFET的电子迁移率、跨导和亚阈值摆幅分别为120 cm²/V·s、18 μS/mm和300 mV/dec。此外，具有再生长p-GaN栅极体的MOSFET的I/I比约为4×10⁷，据我们所知，这是迄今为止GaN-MOSFET的最佳结果之一。这项研究为基于GaN的功率开关器件的设计和制造提供了有价值的信息。
