Matsumoto Tsubasa, Kato Hiromitsu, Oyama Kazuhiro, Makino Toshiharu, Ogura Masahiko, Takeuchi Daisuke, Inokuma Takao, Tokuda Norio, Yamasaki Satoshi
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan.
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
Sci Rep. 2016 Aug 22;6:31585. doi: 10.1038/srep31585.
We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.
我们制造了具有常关特性的反型沟道金刚石金属氧化物半导体场效应晶体管（MOSFET）。目前，具有反型沟道的硅MOSFET和绝缘栅双极晶体管（IGBT）因其对电力的高可控性和高耐受性而被广泛使用。尽管金刚石半导体被认为是一种在下一代功率器件中具有强大应用潜力的材料，但具有反型沟道的金刚石MOSFET尚未见报道。我们通过湿退火精确控制了金刚石的MOS界面，并在金刚石（111）衬底上制造了具有磷掺杂n型体的p沟道和平面型MOSFET。Al2O3栅极氧化物通过原子层沉积在300°C下沉积到n型金刚石体上。漏极电流由负栅极电压控制，表明在高质量的n型金刚石体/Al2O3界面处形成了具有p型特性的反型沟道。在室温下，栅电极长度为5μm的金刚石MOSFET的最大漏极电流密度和场效应迁移率分别为1.6 mA/mm和8.0 cm²/Vs。
