Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Nano Lett. 2012 Aug 8;12(8):4140-5. doi: 10.1021/nl301699k. Epub 2012 Jul 3.
This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f(t)) of ∼165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of ∼105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates.
本文报告了砷化铟纳米薄膜晶体管在机械刚性和柔性衬底上的射频（RF）性能。我们采用了自对准器件结构，使用 T 形栅结构，成功制备了具有 75nm 以下沟道长度的高性能砷化铟金属-氧化物-半导体场效应晶体管（MOSFET）。RF 测量结果表明，在硅衬底上制作的砷化铟器件的截止频率（f(t)）约为 165GHz，这是在硅上实现的 III-V MOSFET 中最好的结果之一。同样，在可弯曲的聚酰亚胺衬底上制造的器件提供了约 105GHz 的 f(t)，这是在机械柔性衬底上直接制造的晶体管所达到的最佳性能。这些结果表明了绝缘层上 III-V 技术在传统硅和柔性衬底上实现极高频（EHF）电子学的潜力。
